The MOS FET is also referred to as a MOS FET, an abbreviation for Metal Oxide Semiconductor Field Effect Transistor. It is generally available in both depleted and enhanced versions. This article uses an enhanced MOS FET. It can be divided into NPN type and PNP type. The NPN type is generally referred to as an N-channel type, and the PNP type is generally referred to as a P-channel type. It can be seen from the figure that for the N-channel type field effect transistor, the source and the drain are connected to the N-type semiconductor, and for the P-channel field effect transistor, the source and the drain are connected to the P-type semiconductor. . We know that a general triode is the current that is controlled by the input current. But for FETs, the output current is controlled by the input voltage (or field voltage). It can be considered that the input current is very small or there is no input current, which makes the device have a high input impedance, which is what we call The reason for the FET.
To explain the working principle of the MOS FET, let us first understand the working process of a diode with only one P-N junction. We know that when the diode is applied with a forward voltage (P terminal is connected to the positive terminal and N terminal is connected to the negative electrode), the diode is turned on, and the PN junction has a current. This is because when the P-type semiconductor terminal is a positive voltage, the negative electrons in the N-type semiconductor are attracted to the P-type semiconductor terminal to which the positive voltage is applied, and the positron in the P-type semiconductor terminal is toward the N-type semiconductor terminal. Exercise to form an on current. Similarly, when the diode is connected with a reverse voltage (P terminal is connected to the negative terminal and N terminal is connected to the positive electrode, then the negative voltage is applied to the P-type semiconductor terminal, the positron is concentrated at the P-type semiconductor terminal, and the negative electron is concentrated at the N-type. At the semiconductor end, the electrons do not move, and no current flows through the PN junction, and the diode is turned off.
For the FET when there is no voltage at the gate, the previous analysis shows that there is no current flowing between the source and the drain. At this time, the FET is in the off state, when a positive voltage is applied to the N-channel. When the MOS FET is on the gate, due to the action of the electric field, the negative electrons of the source and drain of the N-type semiconductor are attracted to the gate, but the electrons are concentrated due to the blocking of the oxide film. In the P-type semiconductor between the two N-channels, a current is formed to conduct between the source and the drain. We can also imagine a gap between two N-type semiconductors. The establishment of the gate voltage is equivalent to a bridge between them. The size of the bridge is determined by the gate voltage.
The following is a brief description of the working process of an application circuit composed of a C-MOS field effect transistor (enhanced MOS field effect transistor). The circuit will be an enhanced P-channel MOS field controller and an enhanced N-channel MOS field effect transistor. Used together in combination. When the input terminal is at the bottom level, the P-channel MOS FET is turned on, and the output terminal is connected to the positive terminal of the power supply. When the input terminal is at a high level, the N-channel MOS FET is turned on, and the output terminal is connected to the power ground. In this circuit, the P-channel MOS FET and the N-channel FET always operate in opposite states, with the phase input and output being opposite. Through this way we can get a larger current output. At the same time, due to the influence of leakage current, the gate voltage has not yet reached 0V, and the MOS field effect transistor is normally turned off when the gate voltage is less than 1V to 2V. The MOSFET voltages are slightly different for different FETs. It is also thought that this circuit will not cause the short circuit of the power supply because the two tubes are simultaneously turned on. From the above analysis, we can draw the working process of the MOS FET part in the schematic diagram. The working principle is the same as before, this low voltage, When the alternating current with a large current and frequency of 50 Hz passes through the low voltage winding of the transformer, a high voltage alternating voltage is induced on the high voltage side of the transformer to complete the conversion from DC to AC. It should be noted here that in some cases, such as when the oscillating part stops working, the low voltage side of the transformer sometimes has a large current, so the fuse of the circuit cannot be omitted or shorted.
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