Japan Insulators has developed a GaN (gallium nitride) silicon wafer that can double the luminous efficiency of LED light sources. The silicon wafer adopts a self-developed liquid phase growth method for growing a GaN single crystal body, and achieves a low defect density on the entire surface of the silicon wafer while obtaining colorless transparent characteristics.
With the assistance of other research institutions, Japan Insulators manufactured LED components on GaN silicon wafers developed and conducted luminescent properties tests. The results show that the internal quantum efficiency of the LED element reaches about 90% (when the injection current is 200 mA).
According to the Japanese Insulators, the internal quantum efficiency of commercially available LED components is 30 to 40% (injection current of 200 mA). As a result, the internal quantum efficiency of LED components fabricated using newly developed silicon wafers is more than doubled. In this way, the luminous efficiency can be doubled (200 lm/W) of the commercially available LED light source, the power consumption can be reduced by 50%, and heat generation can be suppressed, thereby realizing a long life and miniaturization of the lighting fixture.
With the assistance of other research institutions, Japan Insulators manufactured LED components on GaN silicon wafers developed and conducted luminescent properties tests. The results show that the internal quantum efficiency of the LED element reaches about 90% (when the injection current is 200 mA).
According to the Japanese Insulators, the internal quantum efficiency of commercially available LED components is 30 to 40% (injection current of 200 mA). As a result, the internal quantum efficiency of LED components fabricated using newly developed silicon wafers is more than doubled. In this way, the luminous efficiency can be doubled (200 lm/W) of the commercially available LED light source, the power consumption can be reduced by 50%, and heat generation can be suppressed, thereby realizing a long life and miniaturization of the lighting fixture.
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